ДЭЛГЭРЭНГҮЙ
- Form Factor: M2 (2280)
- Storage Memory: Samsung V-Nand 3-bit MLC
- Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
- Sequential Read: Up to 7450MB/s
- Sequential Write: Up to 6900MB/s
- Random Read (4KB, QD32): Up to 1,400,000 IOPS
- Random Write (4KB, QD32): Up to 1,550,000 IOPS
- Random Read (4KB, QD1): Up to 22,000 IOPS
- Random Write (4KB, QD1): Up to 80,000 IOPS
- Operating Temperature: 0-70℃
- Allowable Voltage: 3.3V±5% allowable voltage
- Reliability (MTBF): 1.5 Million Hours of Reliability.
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